The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 03, 2018
Filed:
Apr. 13, 2015
Applicant:
Element Six Technologies Limited, Didcot, Oxfordshire, GB;
Inventors:
Chee-Leong Lee, Berkshire, GB;
Erdan Gu, Berkshire, GB;
Geoffrey Alan Scarsbrook, Berkshire, GB;
Ian Friel, Berkshire, GB;
Martin David Dawson, Berkshire, GB;
Assignee:
Element Six Technologies Limited, Didcot, Oxfordshire, GB;
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/27 (2006.01); C01B 31/06 (2006.01); C30B 25/10 (2006.01); C30B 25/20 (2006.01); C30B 29/04 (2006.01); G01N 27/30 (2006.01); H01L 21/02 (2006.01); H01L 21/04 (2006.01); H01L 29/04 (2006.01); H01L 29/16 (2006.01); H01L 29/167 (2006.01); H01L 29/36 (2006.01); G01N 21/87 (2006.01); G01N 21/95 (2006.01); H01J 37/32 (2006.01); C01B 32/28 (2017.01);
U.S. Cl.
CPC ...
C01B 31/065 (2013.01); C01B 32/28 (2017.08); C23C 16/27 (2013.01); C23C 16/274 (2013.01); C23C 16/278 (2013.01); C30B 25/105 (2013.01); C30B 25/20 (2013.01); C30B 29/04 (2013.01); G01N 21/87 (2013.01); G01N 21/95 (2013.01); G01N 27/308 (2013.01); H01J 37/321 (2013.01); H01L 21/0262 (2013.01); H01L 21/02104 (2013.01); H01L 21/02376 (2013.01); H01L 21/02527 (2013.01); H01L 21/02579 (2013.01); H01L 21/02634 (2013.01); H01L 21/041 (2013.01); H01L 29/045 (2013.01); H01L 29/1602 (2013.01); H01L 29/167 (2013.01); H01L 29/36 (2013.01); G01N 2201/0636 (2013.01); H01J 2237/08 (2013.01); H01J 2237/3341 (2013.01); Y10T 428/24355 (2015.01);
Abstract
A polycrystalline CVD diamond material comprising a surface having a surface roughness Rof less than 5 nm, wherein said surface is damage free to the extent that if an anisotropic thermal revealing etch is applied thereto, a number density of defects revealed by the anisotropic thermal revealing etch is less than 100 per mm.