The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 03, 2018
Filed:
Sep. 12, 2014
Applicant:
Basf Corporation, Florham Park, NJ (US);
Inventors:
Jacobus Hoekstra, De Meern, NL;
John Wilhelm Geus, Bilthoven, NL;
Leonardus Wijnand Jenneskens, Soest, NL;
Assignee:
BASF CORPORATION, Florham Park, NJ (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B01J 21/18 (2006.01); C10G 27/00 (2006.01); C10G 49/06 (2006.01); C10G 49/02 (2006.01); D01F 9/127 (2006.01); D01F 9/16 (2006.01); B01J 23/40 (2006.01); B01J 23/70 (2006.01); B01J 27/20 (2006.01); C01B 32/16 (2017.01); B01J 37/08 (2006.01); B01J 37/02 (2006.01); B01J 23/16 (2006.01); B01J 23/745 (2006.01); B01J 23/755 (2006.01); B01J 35/06 (2006.01); C01B 32/907 (2017.01);
U.S. Cl.
CPC ...
B01J 21/185 (2013.01); B01J 23/40 (2013.01); B01J 23/70 (2013.01); B01J 27/20 (2013.01); C01B 32/16 (2017.08); C10G 27/00 (2013.01); C10G 49/02 (2013.01); C10G 49/06 (2013.01); D01F 9/127 (2013.01); D01F 9/16 (2013.01); B01J 23/16 (2013.01); B01J 23/745 (2013.01); B01J 23/755 (2013.01); B01J 35/06 (2013.01); B01J 37/0203 (2013.01); B01J 37/0219 (2013.01); B01J 37/0238 (2013.01); B01J 37/084 (2013.01); C01B 32/907 (2017.08);
Abstract
The invention is directed to a process for producing carbon nanofibers and/or carbon nanotubes, which process comprises pyrolyzing a particulate cellulosic and/or carbohydrate substrate that has been impregnated with a compound of an element or elements, the metal or alloy, respectively, of which is capable of forming carbides, in a substantially oxygen free, volatile silicon compound containing atmosphere, optionally in the presence of a carbon compound.