The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 26, 2018
Filed:
Jul. 30, 2013
Semiconductor Components Industries, Llc, Phoenix, AZ (US);
Sergey Velichko, Boise, ID (US);
Gennadiy Agranov, San Jose, CA (US);
SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC, Phoenix, AZ (US);
Abstract
An imaging system may include an image sensor having front side illuminated near infrared image sensor pixels. Each pixel may be formed in a graded epitaxial substrate layer such as a graded p-type epitaxial layer or a graded n-type epitaxial layer on a graded p-type epitaxial layer. Each pixel may be separated from an adjacent pixel by an isolation trench formed in the graded epitaxial layer. A deep p-well may be formed within each isolation trench. The isolation trenches and photodiodes for the pixels may be formed in the graded p-type epitaxial layer or the graded n-type epitaxial layer. The graded p-type epitaxial layer may have an increasing concentration of dopants that increases toward the backside of the image sensor. The graded n-type epitaxial layer may have an increasing concentration of dopants that increases toward the front side of the image sensor.