The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 26, 2018

Filed:

Nov. 11, 2016
Applicant:

Texas Instruments Incorporated, Dallas, TX (US);

Inventors:

Neng Jiang, Plano, TX (US);

Maciej Blasiak, Plano, TX (US);

Nicholas S. Dellas, Dallas, TX (US);

Brian E. Goodlin, Plano, TX (US);

Assignee:
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 41/083 (2006.01); H03H 9/02 (2006.01); H01L 21/3213 (2006.01); H01L 21/3205 (2006.01); H01L 29/06 (2006.01); H03H 3/02 (2006.01); H03H 9/17 (2006.01);
U.S. Cl.
CPC ...
H03H 9/02015 (2013.01); H01L 21/32056 (2013.01); H01L 21/32136 (2013.01); H01L 21/32139 (2013.01); H01L 29/0657 (2013.01); H03H 3/02 (2013.01); H03H 9/02102 (2013.01); H03H 9/02133 (2013.01); H03H 9/175 (2013.01); H03H 9/178 (2013.01); H03H 2003/025 (2013.01);
Abstract

Method of forming a termination angle in a titanium tungsten layer include providing a titanium tungsten layer and applying a photo resist material to the titanium tungsten layer. The photo resist material is exposed under a defocus condition to generate a resist mask, wherein an edge of the exposed photo resist material corresponds to the sloped termination. The titanium tungsten layer is etched with an etching material, wherein the etching material at least partially etches the photo resist material exposed under the defocused condition, and wherein the etching results in the sloped termination in the titanium tungsten layer.


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