The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 26, 2018
Filed:
Jul. 31, 2012
Hans S Cho, Palo Alto, CA (US);
Janice H Nickel, Pacifica, CA (US);
R. Stanley Williams, Portola Valley, CA (US);
Jaesung Roh, Icheon-si, KR;
Jinwon Park, Icheon-si, KR;
Choi Hyejung, Icheon-si, KR;
Moonsig Joo, Icheon-si, KR;
Jiwon Moon, Icheon-si, KR;
Changgoo Lee, Icheon-si, KR;
Yongsun Sohn, Icheon-si, KR;
Jeongtae Kim, Icheon-si, KR;
Hans S Cho, Palo Alto, CA (US);
Janice H Nickel, Pacifica, CA (US);
R. Stanley Williams, Portola Valley, CA (US);
Jaesung Roh, Icheon-si, KR;
Jinwon Park, Icheon-si, KR;
Choi Hyejung, Icheon-si, KR;
Moonsig Joo, Icheon-si, KR;
Jiwon Moon, Icheon-si, KR;
Changgoo Lee, Icheon-si, KR;
Yongsun Sohn, Icheon-si, KR;
Jeongtae Kim, Icheon-si, KR;
Hewlett Packard Enterprise Development LP, Houston, TX (US);
Abstract
Examples of the present disclosure include non-volatile resistive memory cells and methods of forming the same. An example of a non-volatile resistive memory cell includes a first portion of the non-volatile resistive memory cell formed as a vertically-extending structure on a first electrode, where the first portion comprises at least one memristive material across a width of the vertically-extending structure. The non-volatile resistive memory cell also includes a second portion formed as a vertically-extending memristive material structure on at least one sidewall of the first portion.