The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 26, 2018
Filed:
Jun. 10, 2015
Applicant:
Semicon Light Co., Ltd., Gyeonggi-do, KR;
Inventors:
Assignee:
SEMICON LIGHT CO., LTD., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/46 (2010.01); H01L 33/08 (2010.01); H01L 33/10 (2010.01); H01L 33/12 (2010.01); H01L 33/38 (2010.01); H01L 33/50 (2010.01); H01L 33/62 (2010.01); H01L 33/64 (2010.01);
U.S. Cl.
CPC ...
H01L 33/46 (2013.01); H01L 33/08 (2013.01); H01L 33/10 (2013.01); H01L 33/12 (2013.01); H01L 33/387 (2013.01); H01L 33/50 (2013.01); H01L 33/62 (2013.01); H01L 33/64 (2013.01);
Abstract
Disclosed is a semiconductor light emitting device including: a plurality of semiconductor layers; a non-conductive reflective film which is formed on the plurality of semiconductor layers; and first and second electrodes formed on the non-conductive reflective film, wherein a spacing between the first electrode and the second electrode is 80 μm or greater, and a ratio of a combined area of the first and second electrodes to a planform area of the semiconductor light emitting device as seen on a top view is 0.7:1 or less.