The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 26, 2018
Filed:
Oct. 22, 2014
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Craig Breen, Somerville, MA (US);
Wenhao Liu, Billerica, MA (US);
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Gyeonggi-Do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/06 (2010.01); H01L 33/30 (2010.01); H01L 33/28 (2010.01); H01L 33/00 (2010.01); C09K 11/02 (2006.01); C09K 11/56 (2006.01); C09D 11/52 (2014.01); C09K 11/88 (2006.01); B82Y 20/00 (2011.01); H01L 33/50 (2010.01); B82Y 30/00 (2011.01);
U.S. Cl.
CPC ...
H01L 33/06 (2013.01); C09D 11/52 (2013.01); C09K 11/02 (2013.01); C09K 11/565 (2013.01); C09K 11/883 (2013.01); H01L 33/0029 (2013.01); H01L 33/28 (2013.01); B82Y 20/00 (2013.01); B82Y 30/00 (2013.01); H01L 33/502 (2013.01); Y10S 977/774 (2013.01); Y10S 977/95 (2013.01);
Abstract
A coated quantum dot is provided wherein the quantum dot is characterized by having a solid state photoluminescence external quantum efficiency at a temperature of 90° C. or above that is at least 95% of the solid state photoluminescence external quantum efficiency of the semiconductor nanocrystal at 25° C. Products including quantum dots described herein are also disclosed.