The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 26, 2018

Filed:

Jun. 24, 2015
Applicant:

Joled Inc., Tokyo, JP;

Inventors:

Mitsutaka Matsumoto, Kyoto, JP;

Arinobu Kanegae, Osaka, JP;

Assignee:

JOLED INC., Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/08 (2006.01); H01L 29/786 (2006.01); H01L 29/24 (2006.01); H01L 29/66 (2006.01); H01L 21/383 (2006.01); H01L 21/385 (2006.01); H01L 27/32 (2006.01); H01L 27/12 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7869 (2013.01); H01L 21/383 (2013.01); H01L 21/385 (2013.01); H01L 29/24 (2013.01); H01L 29/66969 (2013.01); H01L 29/78603 (2013.01); H01L 29/78696 (2013.01); H01L 27/1225 (2013.01); H01L 27/3262 (2013.01);
Abstract

A thin film transistor includes: a substrate; an undercoat layer disposed on the substrate; an oxide semiconductor layer formed above the undercoat layer and including at least indium; a gate insulating layer located opposite the undercoat layer with the oxide semiconductor layer being between the gate insulating layer and the undercoat layer; a gate electrode located opposite the oxide semiconductor layer with the gate insulating layer being between the gate electrode and the oxide semiconductor layer; and a source electrode and a drain electrode electrically connected to the oxide semiconductor layer, wherein fluorine is included in a region which is an internal region in the oxide semiconductor layer and is close to the undercoat layer.


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