The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 26, 2018

Filed:

Mar. 30, 2015
Applicant:

Sakai Display Products Corporation, Sakai-shi, Osaka, JP;

Inventors:

Shigeru Ishida, Sakai, JP;

Nobutake Nodera, Sakai, JP;

Ryohei Takakura, Sakai, JP;

Yoshiaki Matsushima, Sakai, JP;

Takao Matsumoto, Sakai, JP;

Kazuki Kobayashi, Sakai, JP;

Taimi Oketani, Sakai, JP;

Assignee:

Sakai Display Products Corporation, Sakai-shi, Osaka, JP;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78663 (2013.01); H01L 29/78669 (2013.01); H01L 29/78672 (2013.01); H01L 29/78678 (2013.01);
Abstract

The thin film transistor includes a gate electrode formed on a surface of a substrate; a first amorphous silicon layer formed on an upper side of the gate electrode; a plurality of polysilicon layers separated by the first amorphous silicon layer and formed on the upper side of the gate electrode with a required spaced dimension; a second amorphous silicon layer and an n+ silicon layer which are formed on the upper side of the plurality of polysilicon layers and the first amorphous silicon layer; and a source electrode and a drain electrode formed on the n+ silicon layer.


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