The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 26, 2018
Filed:
Oct. 20, 2016
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Dong Chan Suh, Suwon-si, KR;
Yong Suk Tak, Seoul, KR;
Gi Gwan Park, Hwaseong-si, KR;
Mi Seon Park, Daegu, KR;
Moon Seung Yang, Hwaseong-si, KR;
Seung Hun Lee, Hwaseong-si, KR;
Poren Tang, Hwaseong-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
A semiconductor device includes at least a first wire pattern, a gate electrode, a semiconductor pattern, a gate insulating layer, and a first spacer. The first wire pattern is on a substrate and isolated from the substrate. The gate electrode surrounds and intersects the first wire pattern. The semiconductor pattern is on both sides of the first wire pattern, and the semiconductor pattern includes a portion which overlaps the first wire pattern. The gate insulating layer is disposed between the gate electrode and the first wire pattern, and the gate insulating layer surrounds the first wire pattern. The first spacer is between the first wire pattern and the substrate, and the first spacer is between the gate insulating layer and the semiconductor pattern.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile