The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 26, 2018
Filed:
Sep. 17, 2015
Sony Semiconductor Solutions Corporation, Kanagawa, JP;
Takashi Nakashikiryo, Kumamoto, JP;
Yoshiaki Kitano, Kumamoto, JP;
Yuuji Nishimura, Kumamoto, JP;
Kouichi Itabasi, Kumamoto, JP;
Ryou Chiba, Kumamoto, JP;
Yosuke Takita, Kumamoto, JP;
Mitsuru Ishikawa, Kumamoto, JP;
Toyomi Jinwaki, Kumamoto, JP;
Yuichi Seki, Kumamoto, JP;
Masaya Shimoji, Kumamoto, JP;
Yoichi Ootsuka, Kanagawa, JP;
Takafumi Nishi, Kanagawa, JP;
SONY SEMICONDUCTOR SOLUTIONS CORPORATION, Kanagawa, JP;
Abstract
The present disclosure relates to a solid-state imaging device that enables diffusion of components in the interfaces between microlenses and an antireflection film, a method of manufacturing the solid-state imaging device, and an electronic apparatus. Moisture permeation holes are formed between the microlenses of adjacent pixels. The moisture permeation holes are covered with an antireflection film. The antireflection film is formed on the surfaces of the microlenses excluding the diffusion holes. The refractive index of the antireflection film is higher than the refractive index of the microlenses. The present disclosure can be applied to complementary metal oxide semiconductor (CMOS) image sensors that are back-illuminated solid-state imaging devices, for example.