The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 26, 2018
Filed:
Aug. 16, 2016
SK Hynix Inc., Gyeonggi-do, KR;
Sung-Kun Park, Gyeonggi-do, KR;
Yun-Hui Yang, Gyeonggi-do, KR;
Pyong-Su Kwag, Gyeonggi-do, KR;
Dong-Hyun Woo, Gyeonggi-do, KR;
Young-Jun Kwon, Gyeonggi-do, KR;
Min-Ki Na, Gyeonggi-do, KR;
Cha-Young Lee, Gyeonggi-do, KR;
Ho-Ryeong Lee, Gyeonggi-do, KR;
SK Hynix Inc., Gyeonggi-do, KR;
Abstract
An image sensor may include: a photoelectric conversion element suitable for generating a photo charge in response to incident light; and a transfer transistor suitable for transferring the photo charge generated by the photoelectric conversion element to a floating diffusion in response to a transfer signal, the transfer transistor comprising a first transfer gate formed over the photoelectric conversion element; an opening formed in the first transfer gate and exposing the photoelectric conversion element; a second transfer gate formed in the opening; and a channel layer interposed between the first and second transfer gates and between the photoelectric conversion element and the second transfer gate.