The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 26, 2018
Filed:
Apr. 24, 2017
Applicant:
Magnachip Semiconductor, Ltd., Cheongju-si, KR;
Inventors:
Duk Ju Jeong, Seoul, KR;
Sung Bum Park, Seongnam-si, KR;
Kee Sik Ahn, Hwaseong-si, KR;
Young Chul Seo, Gwangmyeong-si, KR;
Assignee:
Magnachip Semiconductor, Ltd., Cheongju-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 17/16 (2006.01); H01L 27/112 (2006.01); H01L 23/525 (2006.01); H01L 29/16 (2006.01); H01L 29/161 (2006.01); H01L 29/20 (2006.01); H01L 29/10 (2006.01); H01L 29/06 (2006.01); G11C 17/18 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11206 (2013.01); G11C 17/16 (2013.01); G11C 17/18 (2013.01); H01L 23/5252 (2013.01); H01L 29/0649 (2013.01); H01L 29/1083 (2013.01); H01L 29/16 (2013.01); H01L 29/161 (2013.01); H01L 29/1608 (2013.01); H01L 29/20 (2013.01);
Abstract
A non-volatile semiconductor storage device includes a gate insulating film formed on a semiconductor substrate, a gate electrode formed on the gate insulating film, and first and second spaced apart doped regions formed below the gate insulating film and the gate electrode in the semiconductor substrate, wherein a grounded region of the first and second spaced apart doped regions is grounded via a contact.