The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 26, 2018
Filed:
Mar. 25, 2016
Applicant:
Fujitsu Limited, Kawasaki-shi, Kanagawa, JP;
Inventors:
Assignee:
FUJITSU LIMITED, Kawasaki, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/70 (2006.01); H01L 23/48 (2006.01); H01L 23/00 (2006.01); H01L 21/768 (2006.01); H01L 21/8234 (2006.01); H01L 21/31 (2006.01); H01L 23/31 (2006.01);
U.S. Cl.
CPC ...
H01L 23/481 (2013.01); H01L 21/31 (2013.01); H01L 21/76898 (2013.01); H01L 21/823475 (2013.01); H01L 21/823481 (2013.01); H01L 23/562 (2013.01); H01L 23/3114 (2013.01);
Abstract
A semiconductor device includes: a semiconductor substrate; a wiring layer provided on a front-surface side of the semiconductor substrate; a through-via that penetrates through the semiconductor substrate from a back-surface side of the semiconductor substrate and is coupled to a wire included in the wiring layer; and a stress relaxation part that protrudes toward a through-via side and is disposed on a section in the wire and coupled to the through-via, the stress relaxation part including at least one insulating portion containing an insulating material having a smaller thermal expansion coefficient than a material of the through-via.