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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10008390 B1

PDFFull Text
Date of Patent:
Jun. 26, 2018

Filed:

Mar. 10, 2015

Manufacturing method of semiconductor device and semiconductor manufacturing apparatus

Applicant:

Toshiba Memory Corporation, Tokyo, JP;

Inventors:

Yukiteru Matsui, Aichi, JP;

Kyoichi Suguro, Kanagawa, JP;

Akifumi Gawase, Mie, JP;

Takahiko Kawasaki, Aichi, JP;

Assignee:

Toshiba Memory Corporation, Tokyo, JP;

Attorney:

Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.

Primary Examiner:

Stephanie P Duclair

Int. Cl.
CPC ...
H01L 21/302 (2006.01); H01L 21/461 (2006.01); B44C 1/22 (2006.01); C03C 15/00 (2006.01); C03C 25/68 (2006.01); H01L 21/3115 (2006.01); H01L 21/321 (2006.01); H01J 37/317 (2006.01); H01L 21/304 (2006.01); H01L 21/306 (2006.01); H01L 21/3105 (2006.01); H01L 21/3215 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31155 (2013.01); H01J 37/3171 (2013.01); H01L 21/304 (2013.01); H01L 21/30625 (2013.01); H01L 21/31053 (2013.01); H01L 21/3212 (2013.01); H01L 21/3215 (2013.01); H01L 21/32115 (2013.01); B81C 2201/0123 (2013.01); B81C 2201/0125 (2013.01); H01J 2237/31711 (2013.01);
Abstract

A manufacturing method of a semiconductor device according to an embodiment implants impurities into a central portion of a polishing target film or an outer peripheral portion of the central portion of the polishing target film to cause an impurity concentration in the outer peripheral portion of the polishing target film and an impurity concentration in the central portion thereof to be different from each other, thereby modifying a surface of the polishing target film. The modified surface of the polishing target film is polished by a CMP method.

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