The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 26, 2018
Filed:
Dec. 19, 2016
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Yo-han Lee, Incheon, KR;
Ji-suk Kim, Seoul, KR;
Chang-yeon Yu, Hwaseong-si, KR;
Jin-young Chun, Seoul, KR;
Se-heon Baek, Seoul, KR;
Jun-young Ko, Seoul, KR;
Seong-ook Jung, Seoul, KR;
Ji-su Kim, Incheon, KR;
SAMSUNG ELECTRONICS CO., LTD., Gyeonggi-Do, KR;
INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YONSEI UNIVERSITY, Seoul, KR;
Abstract
A programming method of a non-volatile memory device including a plurality of memory cells arranged in a plurality of cell strings includes sequentially applying a first pass voltage to unselected word lines of word lines connected to the plurality of memory cells during a first interval and a second pass voltage higher than the first pass voltage to the unselected word lines during a second interval; and applying a discharge voltage lower than a program voltage to a selected word line of the word lines connected to the plurality of memory cells after applying the program voltage to the selected word line in the first interval, and applying the program voltage to the selected word line during the second interval.