The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 26, 2018

Filed:

May. 16, 2017
Applicants:

Imec Vzw, Leuven, BE;

Katholieke Universiteit Leuven, Leuven, BE;

Inventors:

Koen Martens, Ghent, BE;

Adrien Vaysset, Leuven, BE;

Assignees:

IMEC vzw, Leuven, BE;

Katholieke Universiteit Leuven, Leuven, BE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/16 (2006.01); G11C 11/15 (2006.01); H01L 43/08 (2006.01);
U.S. Cl.
CPC ...
G11C 11/1675 (2013.01); G11C 11/15 (2013.01); G11C 11/161 (2013.01); H01L 43/08 (2013.01);
Abstract

The disclosed technology generally relates to magnetic memory and more particularly to voltage-controlled magnetic memory, and to methods of using same. In one aspect, a magnetic memory comprises a first magnetic stack including a first gate dielectric layer formed between a first gate electrode and a first free ferromagnetic layer. The magnetic memory additionally comprises a second magnetic stack including a second gate dielectric layer formed between a second gate electrode and a second free ferromagnetic layer. The first free ferromagnetic layer and the second free ferromagnetic layer of the magnetic memory are magnetically coupled, contiguous and are positioned at an oblique angle relative to each other, and the first gate electrode and the second gate electrode are electrically isolated from each other.


Find Patent Forward Citations

Loading…