The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 26, 2018

Filed:

Jun. 20, 2014
Applicant:

The Regents of the University of Michigan, Ann Arbor, MI (US);

Inventors:

Yogesh Gianchandani, Ann Arbor, MI (US);

Christine Eun, Ann Arbor, MI (US);

Xin Luo, Ann Arbor, MI (US);

Mark Kushner, Ann Arbor, MI (US);

Zhongmin Xiong, Ann Arbor, MI (US);

Jun-Chieh Wang, Ann Arbor, MI (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G01L 9/00 (2006.01); E21B 47/06 (2012.01);
U.S. Cl.
CPC ...
G01L 9/0072 (2013.01); E21B 47/06 (2013.01); G01L 9/0042 (2013.01); G01L 9/0051 (2013.01); G01L 9/0073 (2013.01);
Abstract

The distance between microscale electrodes can be determined from microdischarge current and/or capacitance distribution among a plurality of electrodes. A microdischarge-based pressure sensor includes a reference pair of electrodes on a body of the sensor and a sensing pair of electrodes. One of the electrodes of the sensing pair is on a diaphragm of the sensor so that the distance between the sensing pair of electrodes changes with diaphragm movement, while the distance between the reference pair does not. Plasma and current distribution within a microdischarge chamber of the sensor is sensitive to very small diaphragm deflections. Pressure sensors can be fabricated smaller than ever before, with useful signals from 50 micron diaphragms spaced only 3 microns from the sensor body. The microdischarge-based sensor is capable of operating in harsh environments and can be fabricated along-side similarly configured capacitive sensors.


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