The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 26, 2018

Filed:

Feb. 03, 2012
Applicants:

Subramanian Vaidyanathan, Basel, CH;

Marcel Kastler, Mannheim, DE;

Bertha Tan, Hong Kong, CN;

MI Zhou, Singapore, SG;

Inventors:

Subramanian Vaidyanathan, Basel, CH;

Marcel Kastler, Mannheim, DE;

Bertha Tan, Hong Kong, CN;

Mi Zhou, Singapore, SG;

Assignee:

BASF SE, Ludwigshafen, DE;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 51/00 (2006.01); C08G 61/12 (2006.01); H01L 51/05 (2006.01);
U.S. Cl.
CPC ...
C08G 61/126 (2013.01); H01L 51/0036 (2013.01); H01L 51/0043 (2013.01); C08G 2261/124 (2013.01); C08G 2261/146 (2013.01); C08G 2261/1412 (2013.01); C08G 2261/312 (2013.01); C08G 2261/3223 (2013.01); C08G 2261/3229 (2013.01); C08G 2261/3246 (2013.01); C08G 2261/334 (2013.01); C08G 2261/3327 (2013.01); C08G 2261/344 (2013.01); C08G 2261/364 (2013.01); C08G 2261/414 (2013.01); C08G 2261/51 (2013.01); C08G 2261/92 (2013.01); H01L 51/0558 (2013.01);
Abstract

A method for producing an organic semiconductor device () having at least one organic semiconducting material () and at least two electrodes () adapted to support an electric charge carrier transport through the organic semiconducting material () is disclosed. The organic semiconducting material () intrinsically has ambipolar semiconducting properties. The method comprises at least one step of generating at least one intermediate layer () which at least partially is interposed between the organic semiconducting material () and at least one of the electrodes () of the organic semiconductor device (). The intermediate layer () comprises at least one thiol compound having the general formula HS—R, wherein R is an organic residue. The thiol compound has an electric dipole moment pointing away from the SH-group of the thiol compound. The electric dipole moment has at least the same magnitude as the electric dipole moment in 4-Phenylthiophenol. By the intermediate layer () an ambipolar charge carrier transport between the electrodes () is suppressed in favor of a unipolar charge carrier transport.


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