The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 26, 2018

Filed:

Sep. 01, 2015
Applicant:

Qualcomm Incorporated, San Diego, CA (US);

Inventors:

Lennart Karl-Axel Mathe, San Diego, CA (US);

Sameer Wadhwa, San Diego, CA (US);

Lingli Xia, San Diego, CA (US);

Assignee:

QUALCOMM Incorporated, San Diego, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 17/00 (2006.01); A61B 5/117 (2016.01); G01S 15/89 (2006.01); G06K 9/00 (2006.01); G01S 7/52 (2006.01); H03K 17/975 (2006.01); H01L 27/20 (2006.01);
U.S. Cl.
CPC ...
A61B 5/117 (2013.01); G01S 7/52079 (2013.01); G01S 15/8906 (2013.01); G06K 9/0002 (2013.01); H01L 27/20 (2013.01); H03K 17/975 (2013.01);
Abstract

An apparatus, such as a pixel sensor for an ultrasonic imaging apparatus, is disclosed. The apparatus includes a first metallization layer coupled to a piezoelectric layer, wherein a first voltage is formed at the first metallization layer in response to an ultrasonic wave reflecting off an item-to-be-imaged (e.g., a user's fingerprint) and propagating through the piezoelectric layer, and wherein the first metallization layer is situated above a substrate; a second metallization layer situated between the first metallization layer and the substrate; and a device configured to apply a second voltage to the second metallization layer to reduce a parasitic capacitance between the first metallization layer and the substrate.


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