The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 19, 2018
Filed:
Dec. 21, 2016
Applicant:
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Inventors:
Assignee:
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Primary Examiner:
Int. Cl.
CPC ...
H03K 17/687 (2006.01); H03K 17/567 (2006.01); H01L 29/20 (2006.01); H01L 29/778 (2006.01); H01L 27/06 (2006.01); H01L 29/872 (2006.01); H01L 29/861 (2006.01);
U.S. Cl.
CPC ...
H03K 17/567 (2013.01); H01L 27/0605 (2013.01); H01L 27/0629 (2013.01); H01L 29/2003 (2013.01); H01L 29/7787 (2013.01); H01L 29/861 (2013.01); H01L 29/872 (2013.01);
Abstract
A semiconductor device according to one embodiment includes a first normally-off type transistor including a first source, a first drain, a first gate, and a first body diode, a second normally-off type transistor including a second source connected to the first source, a second drain, a second gate connected to the first gate, and a second body diode, a normally-on type transistor including a third source connected to the first drain, a third drain, and a third gate connected to the second drain, and a diode including an anode connected to the second drain and a cathode connected to the third drain.