The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 19, 2018
Filed:
Jan. 29, 2016
Applicant:
National Taiwan University of Science and Technology, Taipei, TW;
Inventors:
Yian Tai, Taipei, TW;
Bing-Joe Hwang, Taipei, TW;
Kuei-Hsien Chen, Taipei, TW;
Jian-Ming Chiu, Taipei, TW;
Li-Chyong Chen, Taipei, TW;
Assignee:
National Taiwan University of Science and Technology, Taipei, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01M 4/36 (2006.01); H01M 4/58 (2010.01); H01M 4/04 (2006.01); H01M 4/13 (2010.01); H01M 4/38 (2006.01); H01M 4/134 (2010.01); H01M 4/136 (2010.01); H01M 4/1395 (2010.01); H01M 4/1397 (2010.01); H01M 4/02 (2006.01); H01M 10/052 (2010.01);
U.S. Cl.
CPC ...
H01M 4/366 (2013.01); H01M 4/0404 (2013.01); H01M 4/0471 (2013.01); H01M 4/134 (2013.01); H01M 4/136 (2013.01); H01M 4/1395 (2013.01); H01M 4/1397 (2013.01); H01M 4/38 (2013.01); H01M 4/5815 (2013.01); H01M 4/382 (2013.01); H01M 10/052 (2013.01); H01M 2004/027 (2013.01);
Abstract
An electrode structure is provided. The electrode structure includes a substrate, a buffer layer, and a nano-material layer. The buffer layer is disposed on the substrate. The nano-material layer is disposed on the buffer layer, wherein the structure of the nano-material layer is nanowall.