The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10003021 B1

PDF
Full Text
Expired
Date of Patent:
Jun. 19, 2018

Filed:

Feb. 19, 2014
Applicant:

Microchip Technology Incorporated, Chandler, AZ (US);

Inventors:

James Walls, Mesa, AZ (US);

Paul Fest, Chandler, AZ (US);

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01);
U.S. Cl.
CPC ...
H01L 45/1273 (2013.01); H01L 45/08 (2013.01); H01L 45/1233 (2013.01); H01L 45/1608 (2013.01); H01L 45/1675 (2013.01);
Abstract

A method of forming a resistive memory cell, e.g., a CBRAM or ReRAM cell, may include forming a plurality of bottom electrode connections, depositing a bottom electrode layer over the bottom electrode connections, performing an etch to remove portions of the bottom electrode layer to form at least one upwardly-pointing bottom electrode region above the bottom electrode connections, each upwardly-pointing bottom electrode region defining a bottom electrode tip, and forming an electrolyte region and a top electrode over each bottom electrode tip such that the electrolyte region is arranged between the top electrode and the respective bottom electrode top.


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