The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 19, 2018
Filed:
May. 30, 2017
Applicant:
Wavefront Holdings, Llc, Basking Ridge, NJ (US);
Inventor:
Jie Yao, Plainsboro, NJ (US);
Assignee:
WAVEFRONT HOLDINGS, LLC, Basking Ridge, NJ (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H01L 31/0352 (2006.01); H01L 31/105 (2006.01); H01L 31/107 (2006.01); H01L 31/11 (2006.01); H01L 31/0304 (2006.01); H01L 31/18 (2006.01); H01L 27/144 (2006.01);
U.S. Cl.
CPC ...
H01L 31/03529 (2013.01); H01L 27/1446 (2013.01); H01L 27/14649 (2013.01); H01L 27/14681 (2013.01); H01L 31/03042 (2013.01); H01L 31/03046 (2013.01); H01L 31/105 (2013.01); H01L 31/1075 (2013.01); H01L 31/1105 (2013.01); H01L 31/1844 (2013.01);
Abstract
Disclosed are a semiconductor photodiode (PD) or phototransistor (PT) photo detector with a unipolarly doped edge region containing a portion of the photon absorption layer and occupying over 99% of the photo detector area as projected on a plane parallel to the semiconductor substrate. Embodiments also relate to methods of making the photo detector.