The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 19, 2018
Filed:
Jul. 07, 2017
Applicants:
Northwestern University, Evanston, IL (US);
Ramot AT Tel Aviv University Ltd., Tel Aviv, IL;
Inventors:
Joseph S. Friedman, Rochester, NY (US);
Alan V. Sahakian, Northbrook, IL (US);
Andrey Godkin, Tel Aviv, IL;
Alex Henning, Tel Aviv, IL;
Yossi Rosenwaks, Hod Hasharon, IL;
Assignee:
Northwestern University, Evanston, IL (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03K 19/20 (2006.01); H01L 29/78 (2006.01); H01L 29/423 (2006.01); H01L 29/775 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7832 (2013.01); H01L 29/42356 (2013.01); H01L 29/775 (2013.01); H03K 19/20 (2013.01);
Abstract
An electrostatically formed nanowire transistor, includes a source, a drain, and multiple gates surrounding a doped silicon region. The gates include a top gate, a bottom gate, and side gates. The gates induce a channel in said doped silicon region. The channel has a width which is decreased by negative biasing of the side gates, and a height and vertical position controlled by the top and bottom gates.