The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 19, 2018
Filed:
Jun. 08, 2017
The United States of America, As Represented BY the Secretary of the Navy, Washington, DC (US);
Francis J. Kub, Arnold, MD (US);
Travis J. Anderson, Alexandria, VA (US);
Virginia D. Wheeler, Alexandria, VA (US);
Andrew D. Koehler, Alexandria, VA (US);
Karl D. Hobart, Alexandria, VA (US);
The United States of America, as represented by the Secretary of the Navy, Washington, DC (US);
Abstract
Systems and method are provided for depositing metal on GaN transistors after gate formation using a metal nitride Schottky gate. Embodiments of the present disclosure use a 'diamond last' process using thermally stable metal nitride gate electrodes to enable thicker heat spreading films and facilitate process integration. In an embodiment, the 'diamond last' process with high thermal conductivity diamond is enabled by the integration of thermally stable metal-nitride gate electrodes.