The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 19, 2018
Filed:
Jun. 13, 2016
Toyota Jidosha Kabushiki Kaisha, Toyota-shi, Aichi-ken, JP;
Akitaka Soeno, Toyota, JP;
TOYOTA JIDOSHA KABUSHIKI KAISHA, Toyota-shi, JP;
Abstract
A semiconductor device may include a trench, a gate insulating film covering the trench, first conductive type carrier-injected regions intermittently appearing along a predetermined direction, a first conductive type drift region continuously present along the predetermined direction, a second conductive type body region filling a gap between the carrier-injected regions as seen along the predetermined direction, and a gate electrode disposed in the trench. A front end surface located on the front surface side of the gate electrode may include a first end surface at a portion of the gate electrode opposing the carrier-injected regions via the gate insulating film, and a second end surface at least a part of a portion of the gate electrode opposing the body region in the gap. The second end surface may be displaced to the rear surface side relative to the first end surface.