The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 19, 2018
Filed:
Oct. 21, 2013
Applicant:
Denso Corporation, Kariya, Aichi-pref., JP;
Inventor:
Yasushi Ookura, Okazaki, JP;
Assignee:
DENSO CORPORATION, Kariya, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01R 31/02 (2006.01); G01R 31/26 (2014.01); H01L 21/66 (2006.01); H01L 29/739 (2006.01); H01L 29/06 (2006.01); H01L 27/088 (2006.01);
U.S. Cl.
CPC ...
H01L 22/32 (2013.01); H01L 22/14 (2013.01); H01L 27/088 (2013.01); H01L 29/0696 (2013.01); H01L 29/7397 (2013.01); G01R 31/2621 (2013.01); H01L 2924/0002 (2013.01);
Abstract
A semiconductor device includes a semiconductor substrate on which plural gate electrodes are juxtaposed to each other, plural gate wirings formed on the semiconductor substrate, plural gate pads, a first pad, and a second pad. The adjacent gate electrodes define plural cells, and the plural cells include plural transistor cells. The plural gate electrodes are partitioned into plural types by the plural gate wirings. The plural transistor cells are partitioned into plural types according to a combination of the defined gate electrodes.