The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 19, 2018

Filed:

May. 17, 2017
Applicant:

Hitachi, Ltd., Chiyoda-ku, Tokyo, JP;

Inventors:

Misuzu Sagawa, Tokyo, JP;

Tetsufumi Kawamura, Tokyo, JP;

Assignee:

HITACHI, LTD., Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); B81C 1/00 (2006.01); H01L 21/66 (2006.01); H01L 21/306 (2006.01); H01L 21/67 (2006.01); B81C 99/00 (2010.01);
U.S. Cl.
CPC ...
H01L 22/20 (2013.01); B81C 1/00547 (2013.01); B81C 99/0025 (2013.01); B81C 99/0065 (2013.01); H01L 21/30604 (2013.01); H01L 21/67069 (2013.01); H01L 21/67253 (2013.01); H01L 21/67259 (2013.01); B81C 2201/0142 (2013.01);
Abstract

The device manufacturing method includes a length measuring step (S) of, on the basis of an observation target image of an SEM image taken from a direction having a predetermined angle from a direction perpendicular to a plane of a substrate, measuring the thickness of a target object, or the depth of etching, formed on the substrate. In addition, in the length measuring step, an etching angle made by a cross section of the etching and the direction perpendicular to the plane of the substrate is calculated from processing data of the target object, and the thickness of the target object or the depth of the etching is measured on the basis of the calculated etching angle.


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