The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 19, 2018
Filed:
Apr. 05, 2017
Applicant:
Arm Ltd., Cambridge, GB;
Inventors:
Mudit Bhargava, Austin, TX (US);
Piyush Agarwal, Noida, IN;
Akshay Kumar, New Delhi, IN;
Glen Arnold Rosendale, Austin, TX (US);
Assignee:
ARM Ltd., Cambridge, GB;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); G11C 13/00 (2006.01);
U.S. Cl.
CPC ...
G11C 13/0097 (2013.01); G11C 13/0004 (2013.01); G11C 13/004 (2013.01); G11C 13/0007 (2013.01); G11C 13/0011 (2013.01); G11C 13/0061 (2013.01); G11C 13/0069 (2013.01);
Abstract
Subject matter provided may relate to devices, such as conducting elements, which operate to place correlated electron switch elements into first and second impedance states. In embodiments, conducting elements are maintained to be at least partially closed continuously during first and second phases of coupling the CES elements between a common source voltage and a corresponding bitline.
Bhargava, Mudit. (2018). Memory devices formed from correlated electron materials (U.S. Patent No. 10002665). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10002665
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile