The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 19, 2018

Filed:

Sep. 18, 2014
Applicant:

Commissariat a L'energie Atomique ET Aux Ene Alt, Paris, FR;

Inventors:

Elisa Vianello, Grenoble, FR;

Gabriel Molas, Grenoble, FR;

Giorgio Palma, Grenoble, FR;

Olivier Thomas, Revel, FR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 13/00 (2006.01); H01L 45/00 (2006.01);
U.S. Cl.
CPC ...
G11C 13/0069 (2013.01); G11C 13/0011 (2013.01); H01L 45/085 (2013.01); H01L 45/12 (2013.01); H01L 45/1233 (2013.01); H01L 45/1266 (2013.01); H01L 45/142 (2013.01); G11C 2013/0073 (2013.01); G11C 2013/0083 (2013.01); G11C 2213/32 (2013.01); G11C 2213/51 (2013.01); G11C 2213/54 (2013.01);
Abstract

The invention more particularly relates to a resistive memory cell comprising a first and a second metal electrodes and a solid electrolyte positioned between the first and the second metal electrodes, with the solid electrolyte comprising a commutation layer in contact with the first electrode and a dielectric layer, with said resistive memory cell being able to be electrically modified so as to switch from a first resistive state to a second resistive state (state LRS) wherein the resistance (R) of the memory cell is at least ten times smaller than the resistance (R) of the memory cell in the HRS state, in the LRS state the first electrode being so arranged as to supply metal ions intended to form at least a conductive filament through said commutation layer, with the cell being characterized in that, in the LRS state, the memory cell is conductive for a range of voltages between 0 Volts and


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