The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 19, 2018

Filed:

Dec. 16, 2016
Applicant:

National Technology & Engineering Solutions of Sandia, Llc, Albuquerque, NM (US);

Inventors:

John King Gamble, IV, Albuquerque, NM (US);

Malcolm S. Carroll, Albuquerque, NM (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G06N 99/00 (2010.01); H01L 29/41 (2006.01); H01L 29/24 (2006.01); B82Y 10/00 (2011.01);
U.S. Cl.
CPC ...
G06N 99/002 (2013.01); B82Y 10/00 (2013.01); H01L 29/24 (2013.01); H01L 29/413 (2013.01);
Abstract

A silicon metal-oxide semiconductor device transports a spin-polarized single electron. An array of silicon quantum dot electrodes is arranged atop a silicon dioxide layer of a silicon metal-oxide semiconductor. The array comprises at least a first electrode and a second electrode adjacent to the first electrode. A transport control logic for individually controls a voltage applied to the electrodes. The transport control logic is configured to gradually decrease a voltage at the first electrode while gradually increasing a voltage at the second electrode. Localization of the single electron is adiabatically transferred from the first electrode to the second electrode while maintaining a desired energy gap between a ground state and a first excited state of the single electron.


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