The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 19, 2018

Filed:

Jan. 18, 2017
Applicant:

Raydium Semiconductor Corporation, Hsinchu, TW;

Inventor:

Chen-Wei Yang, Hsinchu, TW;

Assignee:

Raydium Semiconductor Corporation, Hsinchu County, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 3/044 (2006.01); G06F 3/041 (2006.01);
U.S. Cl.
CPC ...
G06F 3/044 (2013.01); G06F 3/0418 (2013.01); G06F 2203/04105 (2013.01); G06F 2203/04107 (2013.01);
Abstract

A self-capacitive touch and force sensing apparatus includes a metal layer, a sensing component layer, an air gap layer and a processing module. The sensing component layer is disposed above metal layer. The air gap layer is formed between metal layer and sensing component layer. When the self-capacitive touch and force sensing apparatus is operated in a self-capacitive touch sensing mode, metal layer is driven and synchronized with a touch signal, so that no capacitive effect between sensing component layer and metal layer and a first capacitance change is sensed; when the self-capacitive touch and force sensing apparatus is operated in a self-capacitive force sensing mode, metal layer is grounded, so that there is a capacitive effect between sensing component layer and metal layer and a second capacitance change is sensed. The processing module obtains a third capacitance change according to first capacitance change and second capacitance change.


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