The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 19, 2018

Filed:

Sep. 25, 2015
Applicants:

Screen Holdings Co., Ltd., Kyoto, JP;

Osaka University, Osaka, JP;

Inventors:

Hidetoshi Nakanishi, Kyoto, JP;

Akira Ito, Kyoto, JP;

Iwao Kawayama, Suita, JP;

Masayoshi Tonouchi, Suita, JP;

Yuji Sakai, Suita, JP;

Assignees:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01J 5/02 (2006.01); G01N 21/64 (2006.01); H01L 21/26 (2006.01); G01J 1/42 (2006.01); H01L 21/66 (2006.01); G01N 21/3586 (2014.01);
U.S. Cl.
CPC ...
G01N 21/6489 (2013.01); G01J 1/42 (2013.01); H01L 21/26 (2013.01); H01L 22/12 (2013.01); G01N 21/3586 (2013.01); H01L 22/20 (2013.01);
Abstract

There is provided a technique for easily inspecting the modification state of a film in a semiconductor substrate. A modification processing device modifies a film by irradiating a semiconductor substrate with pulsed light emitted from a light irradiation part. The modification processing device includes an electromagnetic wave detection part for detecting an electromagnetic wave pulse including a millimeter wave or a terahertz wave radiated from the semiconductor substrate in response to the irradiation with the pulsed light. The modification processing device further includes a modification determination part for determining the modification state, based on the intensity of the electromagnetic wave pulse.


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