The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 19, 2018

Filed:

Jun. 08, 2017
Applicant:

Ngk Insulators, Ltd., Nagoya, Aichi-perfecture, JP;

Inventors:

Makoto Iwai, Kasugai, JP;

Takashi Yoshino, Ama, JP;

Assignee:

NGK INSULATORS, LTD., Aichi-prefecture, JP;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
C30B 29/40 (2006.01); H01L 33/32 (2010.01); C23C 16/34 (2006.01); C30B 19/02 (2006.01); C30B 19/12 (2006.01); C30B 25/20 (2006.01);
U.S. Cl.
CPC ...
C30B 29/406 (2013.01); C23C 16/34 (2013.01); C30B 19/02 (2013.01); C30B 19/12 (2013.01); C30B 25/20 (2013.01); H01L 33/32 (2013.01);
Abstract

A crystal layer of a nitride of a group 13 element includes a pair of main surfaces. The crystal layer includes high carrier concentration regions having a carrier concentration of 1×10/cmor more and low carrier concentration regions having a carrier concentration of 9×10/cmor less, viewed in a cross section perpendicular to the main surfaces of the crystal layer. Each of the low carrier concentration regions is extended in an elongated shape. The low carrier concentration regions include association parts. The low carrier concentration regions are extended continuously between the pair of the main surfaces.


Find Patent Forward Citations

Loading…