The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 19, 2018

Filed:

Jul. 16, 2014
Applicant:

National Research Council of Canada, Ottawa, CA;

Inventors:

Zhiyi Zhang, Ottawa, CA;

Ye Tao, Ottawa, CA;

Hiroshi Fukutani, Limoges, CA;

Gaozhi Xiao, Ottawa, CA;

Assignee:

Other;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
C09D 11/52 (2014.01); C23C 18/16 (2006.01); C09D 11/54 (2014.01); C23C 18/20 (2006.01); C23C 18/31 (2006.01); C23C 18/40 (2006.01); C23C 18/44 (2006.01); H05K 3/18 (2006.01); H05K 3/24 (2006.01); C09D 11/037 (2014.01); C09D 11/322 (2014.01); C09D 11/38 (2014.01); C23C 16/06 (2006.01); H05K 3/12 (2006.01);
U.S. Cl.
CPC ...
C09D 11/52 (2013.01); C09D 11/037 (2013.01); C09D 11/322 (2013.01); C09D 11/38 (2013.01); C09D 11/54 (2013.01); C23C 16/06 (2013.01); C23C 18/161 (2013.01); C23C 18/166 (2013.01); C23C 18/1676 (2013.01); C23C 18/1678 (2013.01); C23C 18/2066 (2013.01); C23C 18/31 (2013.01); C23C 18/40 (2013.01); C23C 18/44 (2013.01); H05K 3/182 (2013.01); H05K 3/241 (2013.01); H05K 3/12 (2013.01); H05K 2203/1105 (2013.01); H05K 2203/1157 (2013.01);
Abstract

A process for depositing a metal on a substrate involves the use of two reduction reactions in a bottom-up based tandem manner starting from a substrate surface and working upward. A first reduction reaction starts on the substrate surface at ambient temperature, and a second reduction reaction, which is initiated by the reaction heat of the first reduction reaction, occurs in a reactive ink solution film coated on top, which becomes solid after the reaction. Gas and other small molecules generated from the reduction reactions, and the solvent, can readily escape through the upper surface of the film before the solid metal layer is formed or during post-treatment, with no or few voids left in the metal film. Thus, the process can be used to form highly conductive films and features at ambient temperature on various substrates.


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