Yoshifumi Nomura

Title: Yoshifumi Nomura: Innovator in Epitaxial Layer Production

Introduction

Yoshifumi Nomura is a notable inventor based in Ube, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the production of epitaxial layers. His innovative approach has led to advancements that are crucial for the development of various electronic devices.

Latest Patents

Yoshifumi Nomura holds a patent for a "Process for producing epitaxial layers." This patent describes a method where epitaxial layers are formed by introducing a reaction gas mixture into a reaction vessel containing semiconductor substrates. The process operates under a pressure not exceeding 1333 Pa (10 Torr) and utilizes high-frequency induction power to heat the semiconductor substrates, allowing for the growth of layers epitaxially on these substrates. The frequency of the high-frequency power is maintained at or below 50 kHz, ensuring optimal conditions for the epitaxial growth process.

Career Highlights

Nomura is associated with Fujitsu Corporation, where he has been able to apply his expertise in semiconductor technology. His work has not only contributed to the company's advancements but has also positioned him as a key figure in the industry.

Collaborations

Throughout his career, Yoshifumi Nomura has collaborated with esteemed colleagues such as Kaoru Tanabe and Mamoru Maeda. These collaborations have fostered an environment of innovation and have led to further advancements in their respective fields.

Conclusion

Yoshifumi Nomura's contributions to the field of semiconductor technology, particularly through his patent on epitaxial layer production, highlight his role as an influential inventor. His work continues to impact the industry positively, paving the way for future innovations.