Toshiyuki Kawaharamura

Title: The Innovations of Toshiyuki Kawaharamura

Introduction

Toshiyuki Kawaharamura is a notable inventor based in Kami, Japan. He has made significant contributions to the field of semiconductor technology, holding two patents that showcase his innovative approach to manufacturing nitride semiconductor devices.

Latest Patents

Kawaharamura's latest patents include a method for manufacturing a nitride semiconductor device and a switching device. The first patent describes a method that involves the formation of a gate insulation film above a nitride semiconductor layer. This process includes the creation of a silicon oxynitride film that is in contact with the surface of the nitride semiconductor layer. The silicon oxynitride film is formed through the oxidation of a film source material that contains both silicon and nitride in its molecular structure. The second patent focuses on a switching device that incorporates a gallium nitride semiconductor and a gate insulation film made of silicon oxide. This film is positioned above the gallium nitride semiconductor layer, with the interface between the two layers either free of a gallium oxide layer or featuring a gallium oxide layer that is 1 nanometer thick or smaller.

Career Highlights

Throughout his career, Kawaharamura has worked with prominent companies such as Denso Corporation and Toyota Jidosha Kabushiki Kaisha. His experience in these organizations has allowed him to refine his skills and contribute to advancements in semiconductor technology.

Collaborations

Kawaharamura has collaborated with notable colleagues, including Hidemoto Tomita and Takashi Okawa. These partnerships have further enriched his work and fostered innovation in the field.

Conclusion

Toshiyuki Kawaharamura's contributions to semiconductor technology through his patents and collaborations highlight his role as a significant inventor in the industry. His innovative methods continue to influence the development of advanced semiconductor devices.