Shuzhi Zou

Title: Shuzhi Zou - Innovator in Resistive Memory Technology

Shuzhi Zou is a prominent inventor based in Fujian, China. He has made significant contributions to the field of memory devices, particularly with his innovative work on resistive memory technology. His expertise and dedication to advancing technology have positioned him as a notable figure in the industry.

Latest Patents

Shuzhi Zou holds a patent for a resistive memory device. This device features a stacked structure that includes a first electrode, a second electrode, and a variable resistance layer. The second electrode is positioned above the first electrode in a vertical orientation, while the variable resistance layer is situated between the two electrodes. Additionally, the device incorporates a copper via conductor structure located beneath the stacked structure. The first electrode is composed of a tantalum nitride layer that is directly connected to the copper via conductor structure. This innovative design enhances the performance and efficiency of memory devices.

Career Highlights

Shuzhi Zou is currently employed at United Semiconductor (Xiamen) Co., Ltd. His role at the company allows him to apply his knowledge and skills in developing cutting-edge memory technologies. His work has contributed to the advancement of semiconductor technology, making a lasting impact on the industry.

Collaborations

Shuzhi Zou has collaborated with notable colleagues, including Dejin Kong and Xiang Bo Kong. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas.

Conclusion

In summary, Shuzhi Zou is a distinguished inventor whose work in resistive memory technology has made a significant impact in the field. His contributions continue to shape the future of memory devices, showcasing the importance of innovation in technology.