Summit, NJ, United States of America

Shang Y Hou


Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 7(Granted Patents)


Company Filing History:


Years Active: 1999

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1 patent (USPTO):Explore Patents

Title: The Innovative Contributions of Shang Y Hou

Introduction

Shang Y Hou is a notable inventor based in Summit, NJ (US). He has made significant contributions to the field of materials science, particularly in the development of thin film technologies. His work has implications for various applications, including electronics and capacitors.

Latest Patents

Shang Y Hou holds a patent for a method for making thin film tantalum oxide layers with enhanced dielectric properties. The patent describes a process that enhances the dielectric constant of tantalum oxide films, with or without TiO.sub.2 doping. Specifically, the method involves sputtering Ta.sub.2 O.sub.5 in an oxygen-rich environment at elevated temperatures, producing a new crystalline phase thin film with improved dielectric characteristics.

Career Highlights

Shang Y Hou has worked at Lucent Technologies Inc., where he has been involved in cutting-edge research and development. His expertise in thin film technology has positioned him as a key contributor to advancements in the field. His innovative approach has led to the creation of materials that are essential for modern electronic devices.

Collaborations

Shang Y Hou has collaborated with esteemed colleagues, including Robert J Cava and Jueinai Raynien Kwo. These collaborations have fostered a productive research environment, leading to significant advancements in their respective fields.

Conclusion

Shang Y Hou's contributions to the field of materials science, particularly through his patented methods for enhancing thin film technologies, underscore his role as an influential inventor. His work continues to impact the development of advanced materials in electronics.

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