Rca Inc.

Zygmond Turski

Daniel D Mawhinney

Arye Rosen

Herbert J Wolkstein

John Louis Vossen, Jr

A microwave power limiter for generating an output RF signal of substantially constant power level in response to an input RF signal of varying power level comprises a single gate field effect transistor (FET). The FET is biased such that the RF power output variation is small compared to the input power variation in the saturation region. A number of FET cascaded stages may be utilized to reduce this power output variation. A small signal amplifier including a number of FET cascaded stages may be employed in the limiter to increase the power level to that gain or drive level compatible with the saturated FET stages.

Microwave power limiter comprising a single-gate FET

A microwave frequency discriminator using a one port active device amplifier including a circulator for coupling an input RF signal of substantially constant power level into the amplifier and an output RF signal out from the amplifier. The discriminator further comprises input and output matching networks connected to the circulator and a detector for generating a D.C. signal as a function of the incoming signal frequency. The input and output impedance matching networks are formed to provide selected impedance conditions to the amplifier such that the power-frequency response of the amplifier varies substantially linearly approximating a frequency discriminator characteristic throughout a predetermined frequency bandwidth.

Microwave frequency discriminator comprising a one port active device

A microwave frequency discriminator including a multi-stage limiter-amplifier and a detector in an environment of a wide band RF signal of varying power level. The limiter-amplifier comprises a plurality of cascaded saturated amplifiers including an unsaturated output-stage amplifier. The response of the unsaturated output stage amplifier is such that the RF power varies substantially linearly with the input frequency over a predetermined bandwidth. The detector converts the RF signal to a linear dc signal.

Microwave frequency discriminator

A microwave frequency discriminator comprising a field effect transistor (FET) amplifier, input and output impedance matching networks and a detector. The FET is biased to generate an output RF signal within a predetermined frequency bandwidth in response to an input RF signal of substantially constant power level. The input and output impedance matching networks are arranged to provide the impedance conditions to shape and linearize the power-frequency response of the FET amplifier throughout the predetermined frequency bandwidth such that the frequency response approximates the linear power-frequency characteristic of a frequency discriminator.

Microwave frequency discriminator comprising an FET amplifier

A wafer of lithium niobate metallized on both major surfaces is bonded to a magnesium aluminate spinel bulk acoustic delay line. The lithium niobate layer is divided into two separate electrically and mechanically isolated transducers using ion beam milling. The bulk acoustic delay line has a surface arranged to reflect a propagating acoustic wave generated by one of the divided transducers to the other of the transducers, the one transducer serving as an input and the other as an output. The acoustic delay line is suitable for broad band operation at microwave frequencies with at least 50 db isolation between the two ports.

Microwave bulk acoustic delay device having two transducers on the same

A body of lithium niobate coated with a first thin layer of magnesium and a second conductive metal layer on the magnesium layer permits subsequent ultrasonic bonding of a wire to the second layer without problems of delamination.

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Selden, NY, United States of America

Zygmond Turski