Nanoco Technologies Limited

Kyulux, Inc.

Zugang Liu

Nigel Pickett

James Harris

Ayataka Endo

Christopher Paul Newman

Stuart Stubbs

Cary Allen

Nathalie Gresty

Chris Brown

Christoper Newman

Compositions for solution-based deposition of CIGS films are described. The compositions include ternary, quaternary or quinary chalcogenide nanoparticles (i.e., CIGS nanoparticles) and one or more inorganic salts dissolved or dispersed in a solvent to form an ink. The ink can be deposited on a substrate by conventional coating techniques and then annealed to form a crystalline layer. Further processing can be employed to fabricate a PV device. The inorganic salts are included to (i) tune the stoichiometry of the CIGS precursor ink to a desirable ratio, thus tuning the semiconductor band gap, to (ii) dope the CIGS layer with additives, such as Sb and/or Na, to promote grain growth, and/or to (iii) modify and improve the coating properties of the CIGS precursor ink.

Inorganic salt-nanoparticle ink for thin film photovoltaic devices and related methods

A method for formulating a CIGS nanoparticle-based ink, which can be processed to form a thin film with a crack-free limit (CFL) of 500 nm or greater, comprises: dissolving or dispersing Cu(In,Ga)Sand Cu(In,Ga)Senanoparticles; mixing the nanoparticle solutions/dispersions and adding oleic acid to form an ink; depositing the ink on a substrate; annealing to remove the organic components of the ink formulation; forming a film with a CFL &#x2267;500 nm; and, repeating the deposition and annealing process to form a CIGS film having a thickness &#x2267;1 &#x3bc;m. The film so produced may be incorporated into a thin film photovoltaic device.

CIGS nanoparticle ink formulation having a high crack-free limit

Growing community of inventors

Kidlington, United Kingdom

Zugang Liu