Synopsys, Inc.

Zudian Qin

Victor Moroz

Xi-Wei Lin

Karim El Sayed

A method of forming a multitude of GAAFETs on a silicon substrate includes forming alternating layers of Si nanosheets and SiGe alloys above the silicon substrate, depositing a layer of oxide buffer above the top layer of SiGe alloy, depositing a mask layer above the oxide buffer layer, patterning the mask and the oxide, and performing a RIE of the silicon nanosheet and SiGe alloy layers so as to form tapered pillars of silicon nanosheet and SiGe alloy layers. In each tapered pillar, a width of the first layer of silicon nanosheet that is closer to the substrate is greater than a width of the etched second layer of silicon nanosheet that is formed above the first layer of silicon nanosheet. The first, and second tapered silicon nanosheet layers in each pillar form channels of first and second GAAFETs.

Stacked nanosheet device for process and performance optimization

Disclosed is technology for evaluating the performance, power, area, and cost of a new or significantly modified IC fabrication process. A layout of a circuit design is provided, the circuit design including pins, transistors, and interconnects. The interconnects have at least two endpoints, each of the endpoints being either a terminal of a transistor or a pin in the circuit design. The locations for a plurality of transistor and interconnect endpoints in the layout are identified. A three-dimensional circuit representation is fabricated in accordance with the layout and the fabrication process. Parasitic resistance and capacitance values are estimated for pairs of interconnect endpoints which share an interconnect in the three-dimensional circuit representation. An annotated netlist is developed for the plurality of the transistors interconnects endpoints identified from the layout, and which further indicates the parasitic resistance values and parasitic capacitance values estimated from the three-dimensional circuit representation.

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Cupertino, CA, United States of America

Zudian Qin