Huawei Technologies Co., Limited

Peking University

Huazhong University of Science and Technology

Zongwei Wang

Long Wang

Yue Hu

Ru Huang

Yimao Cai

Chao Wang

Zhong Du

Qing Zhuang

Wenliang Bai

Yichen Fang

Yefan Liu

Yuansheng Zhao

Jiarui Xu

A memristor-based in-memory logic circuit and in-memory logic computation system, and applications, pertaining to the technical field of integrated circuits, are provided. The in-memory logic circuit includes: a first memory cell and a second memory cell connected in parallel to each other, and a sense amplifier for generating a logic operation result. The two memory cells include memristors and MOSFET selectors connected in series. Resistance states of the two memristors are used to represent a first group of logic input signals, and voltage signals applied by gates of the two MOSFET selectors are used to represent a second group of logic input signals. Also provided are an in-memory logic computation system and applications.

Memristor-based in-memory logic circuit and in-memory logic computation system, and applications

Display screen or portion thereof with graphical user interface

Display screen with graphical user interface

Display screen or portion thereof with transitional graphical user interface

The present invention discloses an organic resistive random access memory and a preparation method thereof. The memory uses silicon as a substrate, and has a MIM capacitor structure having a vertical memory unit, where the MIM structure has a top electrode of Al, a bottom electrode of ITO, and an middle functional layer of parylene, wherein, a parylene layer as the functional layer is formed by performing deposition multiple times, where the deposition of AlOis performed once by ALD between each two deposition of parylene. A critical region which is in favor of forming a conductive channel could be formed by controlling the deposition area of AlO, and further control the electrical characteristics of the memory. Through the present invention, the cycle-to-cycle and device-to-device uniformity could be effectively improved, without changing the basic structure of the memory.

Organic resistive random access memory and a preparation method thereof

Growing community of inventors

Beijing, China

Zongwei Wang