Drexel University

University of California

Bar-ilan University

Zongquan Gu

Jonathan Eli Spanier

Yury Gogotsi

Babak Anasori

Atanu Samanta

Ilya Grinberg

Dominic Imbrenda

Robert A York

Haim Barak

Matthias Falmbigl

Cedric J G Meyers

Mohammad Anwarul Islam

Andrew Lewis Bennett-Jackson

An article comprising a ferroelectric material in its ferroelectric phase, wherein the article is configured to enable low-loss propagation of signals with ultra-low dielectric loss at one or more select frequencies.

Solid state tunable ionic oscillator dielectric materials and resonant devices

The present disclosure is directed to using MXene compositions as templates for the deposition of oriented perovskite films, and compositions derived from such methods. Certain specific embodiments include methods preparing an oriented perovskite, perovskite-type, or perovskite-like film, the methods comprising: (a) depositing at least one perovskite, perovskite-type, or perovskite-like composition or precursor composition using chemical vapor deposition (CVD), physical vapor deposition (PVD), or atomic layer deposition (ALD) onto a film or layer of a MXene composition supported on a substrate to form a layered composition or precursor composition; and either (b) (1) heat treating or annealing the layered precursor composition to form a layered perovskite-type structure comprising at least one oriented perovskite, perovskite-type, or perovskite-like composition; or (2) annealing the layered composition; or (3) both (1) and (2).

MXene layers as substrates for growth of highly oriented perovskite thin films

Coupling of switchable ferroelectric polarization with the carrier transport in an adjacent semiconductor enables a robust, non-volatile manipulation of the conductance in a host of low-dimensional systems, including the two-dimensional electron liquid that forms at the LaAlO&#x2014;SrTiOinterface. However, the strength of the gate-channel coupling is relatively weak, limited in part by the electrostatic potential difference across a ferroelectric gate. Compositionally grading of PbZrTiOferroelectric gates enables a more than twenty-five-fold increase in the LAO/STO channel conductance on/off ratios. Incorporation of polarization gradients in ferroelectric gates can enable significantly enhanced performance of ferroelectric non-volatile memories.

Engineered ferroelectric gate devices

Growing community of inventors

Chalfont, PA, United States of America

Zongquan Gu