Visera Technologies Company Limited

Industrial Technology Research Institute

Visera Technologies Company Limiied

Zong-Ru Tu

Yu-Chi Chang

Han-Lin Wu

Shin-Hong Kuo

Yu-Kun Hsiao

Ching-Hua Li

Chin-Chuan Hsieh

Cheng-Hsuan Lin

Po-Hsiang Wang

Chi-Han Lin

Hung-Jen Tsai

Chun-Yuan Wang

Chih-Ming Wang

Wei-Ko Wang

Wu-Cheng Kuo

Ching-Chiang Wu

An-Li Kuo

Kai-Hao Chang

Jian-Shian Lin

Li-Wei Chen

Chung-Hao Lin

Jenq-Yang Chang

Chung-Jung Hsu

Chih-Kung Chang

Che-Lung Hsu

Chin-Ching Chang

Mao-Jen Wu

Chih-Chieh Su

Pin-Chia Tseng

Hui-Min Yang

Yao-Chung Tung

Ta-Yung Ni

An image sensing device is provided. The image sensing device includes: a micro lens, a first optical layer, a second optical layer, and an anti-reflection layer. The first optical layer is formed on the micro lens. The second optical layer is formed on the first optical layer. An interface is formed between the first optical layer and the second optical layer, and the interface is beveled. The anti-reflection layer is formed on the second optical layer.

Image sensing device with multiple optical layers formed on micro lens

An optical device is provided. The optical device includes a substrate and a plurality of optical structures. The substrate includes a plurality of photoelectric conversion elements. The optical structures are disposed above the substrate. Each optical structure corresponds to one photoelectric conversion element. Each optical structure includes a first portion and a second portion. The first portion has a first glass transition temperature. The second portion has a second glass transition temperature. The second portion guides the incident light into the photoelectric conversion element. The first glass transition temperature is higher than the second glass transition temperature.

Optical devices

An image sensor includes: a plurality of sensing portions; a color filter layer disposed on the sensing portions; and a micro-lens disposed on the color filter layer. The micro-lens includes a positive radius of curvature, and a dish structure including a negative radius of curvature is formed within the micro-lens.

Image sensor having dish structure formed within micro-lens

The optical device includes a first photodiode, a second photodiode, and a hybrid absorber. The hybrid absorber is disposed above the first photodiode and the second photodiode. The hybrid absorber includes a color filter layer and a plurality of metal-insulator-metal structures. The color filter layer includes a first color filter disposed on the first photodiode and a second color filter disposed on the second photodiode, in which the first color filter is different from the second color filter. The plurality of metal-insulator-metal structures are disposed above the first photodiode and free of disposed above the second photodiode.

Optical device

A light-adjusting device having first regions and second regions is provided. The light-adjusting device includes pillars that form several groups of meta structures. The groups of meta structures correspond to the first regions, and from a top view, the first regions and the second regions are arranged in a checkerboard pattern.

Light-adjusting device and solid-state image sensor using the same

An image sensor includes a first pixel array. The first pixel array includes multiple photo diodes and a polyhedron structure. The polyhedron structure is located above the photo diodes, and the polyhedron structure includes a bottom facet, a top facet, and at least one side facet. The bottom facet is located between the side facet and the photo diodes, and an orthogonal projection of the polyhedron structure overlaps with photo diodes. The polyhedron structure is configured to divide an incident light into a plurality of light beams focused in the photo diodes.

Image sensor

A solid-state image sensor is provided. The solid-state image sensor includes a semiconductor substrate having photoelectric conversion elements. The solid-state image sensor also includes an isolation structure disposed between the photoelectric conversion elements. The solid-state image sensor further includes a color filter layer disposed above the semiconductor substrate and having color filter segments that correspond to the photoelectric conversion elements. Moreover, the solid-state image sensor includes an organic film disposed above the color filter layer. The solid-state image sensor also includes an upper electrode and a lower electrode respectively disposed on the upper side and the lower side of the organic film. The solid-state image sensor further includes nano-structures disposed on the upper side or the lower side of the organic film.

Solid-state image sensor

A solid-state image sensor is provided. The solid-state image sensor includes photoelectric conversion elements and a color filter layer disposed above the photoelectric conversion elements. The photoelectric conversion elements and the color filter layer form normal pixels and auto-focus pixels, the color filter layer that correspond to the normal pixels are divided into first color filter segments and second color filter segments, the first color filter segments are disposed on at least one side that is closer to an incident light, and the width of the first color filter segments is greater than the width of the second color filter segments.

A solid-state image sensor is provided. The solid-state image sensor includes a plurality of photoelectric conversion elements. The solid-state image sensor also includes a first color filter layer disposed above the photoelectric conversion elements and a second color filter layer disposed adjacent to the first color filter layer, which respectively have a plurality of first color filter segments and a plurality of second color filter segments. Moreover, the solid-state image sensor includes a first metal grid structure disposed between the first color filter layer and the second color filter layer. The solid-state image sensor also includes a second metal grid structure disposed between the first color filter segments and between the second color filter segments. The bottom of the first metal grid structure has a first grid width, and the bottom of the second metal grid structure has a second grid width narrower than the first grid width.

A solid-state image sensor is provided. The solid-state image sensor includes a semiconductor substrate having photoelectric conversion elements. The photoelectric conversion elements form an N×N pixel array, where N is a positive integer larger than or equal to 3. The solid-state image sensor also includes a modulation layer disposed above the photoelectric conversion elements. The solid-state image sensor further includes a light-adjusting structure disposed on the modulation layer and corresponding to the N×N pixel array. The N×N pixel array includes a first pixel region having at least one first pixel. The N×N pixel array also includes a second pixel region adjacent to the first pixel region in a first direction and in a second direction different from the first direction and having second pixels. The aperture ratio of the first pixel and the aperture ratio of the second pixel are different.

The present disclosure provides a light sensing element including a unit. The unit includes a plurality of photodiodes, a color filter disposed above the photodiodes, and a light host embedded in the color filter. The light host is a hollow structure disposed above the photodiodes. The color filter includes a first portion surrounding the light host, a second portion surrounded by the light host, and a third portion covering and physically contacting the first portion, the light host, and the second portion.

Light sensing element

An operating method of an under-display camera system includes: providing a raw data by a pixel array; generating, by a plurality of color filters respectively disposed on a plurality of first photodiodes of the pixel array, a color information in accordance with the raw data; generating, by a plurality of first narrowband filters respectively disposed on a plurality of second photodiodes of the pixel array, a first narrowband information in accordance with the raw data, wherein a spectrum linewidth of the plurality of first narrowband filters is in a range from 5 nm to 70 nm; reconstructing an edge information from the first narrowband information based on one of a plurality of diffraction patterns provided by a database unit of a point spread function; and obtaining an image by combining the edge information with the color information.

Under-display camera system and operating method thereof

An optical device is provided. The optical device includes a plurality of IR-cut pixels, a plurality of IR-pass pixels, and a plurality of grids. The grids surround the IR-cut pixels and the IR-pass pixels. Each IR-cut pixel includes a first grating structure. A method for fabricating the optical device is also provided.

A solid-state image sensor is provided. The solid-state image sensor includes a plurality of photoelectric conversion elements. The solid-state image sensor also includes a modulation layer disposed above the photoelectric conversion elements, and the modulation layer has a plurality of modulation segments. The modulation layer includes a plurality of first sub-layers and a plurality of second sub-layers having different refractive indexes. From the top view of the modulation layer, the modulation segments form a first group and a second group, and the second group is adjacent to the first group. The arrangement of the first sub-layers and the second sub-layers in the first group is different from the arrangement of the first sub-layers and the second sub-layers in the second group.

Solid-state image sensor including modulation layer decreasing petal flares

The solid-state image sensor includes a semiconductor substrate having first and second photoelectric conversion elements, a color filter layer, and a hybrid layer. The isolation structure is disposed between the first and second photoelectric conversion elements. The color filter layer is disposed above the semiconductor substrate. The hybrid layer is disposed between the semiconductor substrate and the color filter layer. The hybrid layer includes a first partition structure, a second partition structure, and a transparent layer. The first partition structure is disposed to correspond to the isolation structure. The second partition structure is surrounded by the first partition structure. The transparent layer is between the first partition structure and the second partition structure. The refractive index of the first partition structure and the refractive index of the second partition structure are lower than the refractive index of the transparent layer.

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Keelung, Taiwan

Zong-Ru Tu