Tower Semiconductor Ltd.

Tel Aviv University

Zohar Shaked

Alexey Heiman

Yakov Roizin

Yossi Rosenwaks

Menachem Vofsy

Klimentiy Shimanovich

Yhonatan Vaknin

Sharon Levin

Gal Fleishon

For example, an Electrostatically Formed Nanowire (EFN) may include a source region; at least one drain region; a wire region configured to drive a current between the source and drain regions via a conductive channel; a first lateral-gate area extending along a first surface of the wire region between the source and drain regions; a second lateral-gate area extending along a second surface of the wire region between the source and drain regions; and a sensing area in opening in a backside of a silicon substrate under the wire region and the first and second lateral-gate areas, the sensing area configured to, in reaction to a predefined substance, cause a change in a conductivity of the conductive channel.

Apparatus, system and method of an electrostatically formed nanowire (EFN)

A low Rdson LDMOS transistor having a shallow field oxide region that separates a gate electrode of the transistor from a drain diffusion region of the transistor. The shallow field oxide region is formed separate from the field isolation regions (e.g., STI regions) used to isolate circuit elements on the substrate. Fabrication of the shallow field oxide region is controlled such that this region extends below the upper surface of the semiconductor substrate to a depth that is much shallower than the depth of field isolation regions. For example, the shallow field oxide region may extend below the upper surface of the substrate by only Angstroms or less. As a result, the current path through the resulting LDMOS transistor is substantially unimpeded by the shallow field oxide region, resulting in a low on-resistance.

LDMOS transistor having elevated field oxide bumps and method of making same

Growing community of inventors

Ramat Yishai, Israel

Zohar Shaked