Advanced Technology Materials, Inc.

L'air Liquide, Soci&#xe9;t&#xe9; Anonyme Pour L'etude Et L'exploitation Des Proc&#xe9;d&#xe9;s Georges Claude

Air Liquide Electronics U.S. LP

American Air Liquide, Inc.

Entegris, Inc.

Ziyun Wang

Thomas H Baum

Chongying Xu

Jeffrey F Roeder

Bryan Clark Hendrix

Ravi Kumar Laxman

Tianniu Chen

Jean-Marc Girard

Alexander S Borovik

Ashutosh Misra

Zhiwen Wan

Nicolas Blasco

Audrey Pinchart

Andrey V Korolev

Andreas Zauner

Christian Dussarrat

Michael A Todd

Brian L Benac

Scott L Battle

Yumin Liu

Satoko Gatineau

Witold Paw

Claudia Fafard

Christophe Lachaud

Anthony Correia-Anacleto

Ashulosh Misra

James T Y Lin

Niamh McMahon

Bo Peng

Julien Gatineau

A method of deposition of a gallium-containing oxide film on a substrate comprises a) simultaneously or sequentially, exposing the substrate to a vapor of a gallium precursor, additional metal precursor(s) and an oxidizer; b) depositing at least part of the gallium precursor and at least part of the additional metal precursor(s) onto the substrate to form the gallium-containing oxide film on the substrate through a vapor deposition process, wherein the gallium precursor has the formula:(NRR)(NRR)Ga[(RRN)C(RR)(NR)]  (I)(Cy-N)Ga[(RRN)C(RR)(NR)]  (II)wherein, Rto Rare independently selected from H, Me, Et, nPr, iPr, nBu, iBu, sBu, or tBu; Rto Rmay be the same or different; x=2, 3, 4, preferably x=2; Cy-N refers to saturated N-containing rings or unsaturated N-containing rings.

Method for deposition of gallium-containing film with gallium precursors

Disclosed are methods of using Group 4 transition metal azatrane precursors to deposit Group 4 transition metal-containing films on one or more substrates via vapor deposition processes.

Methods for vapor deposition of group 4 transition metal-containing films using Group 4 transition metal-containing films forming compositions

Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as films including silicon carbonitride, silicon oxycarbonitride, and silicon nitride (SiN), and a method of depositing the silicon precursors on substrates using low temperature (e.g., &#x3c;550&#xb0; C.) chemical vapor deposition processes, for fabrication of ULSI devices and device structures.

Composition and method for low temperature chemical vapor deposition of silicon-containing films including silicon carbonitride and silicon oxycarbonitride films

A method for forming a tantalum-containing layer on a substrate, the method comprising at least the steps of: wherein:

Method of forming a tantalum-containing layer on a substrate

Si(OEt)[CH&#x2014;Si(OEt)]compounds are synthesized by reacting a Grignard reagent having the formula Si(OEt)(CHMgCl) with a quenching agent having the formula Si(OEt)Cl.

Synthesis method for carbosilanes

A SiH[CH&#x2014;Si(OEt)]carbosilane compound is synthesized by reacting a Grignard reagent having the formula Si(OEt)(CHMgCl) with a quenching agent having the formula SiHCl.

Synthesis methods for carbosilanes

Methods of forming titanium-containing layers on substrates are disclosed. In the disclosed methods, the vapor of a precursor compound having the formula Ti(MeCp)(OR), wherein R is selected from methyl, ethyl, or isopropyl is provided. The vapor is reacted with the substrate according to an atomic layer deposition process to form a titanium-containing complex on the surface of the substrate.

Method for forming a titanium-containing layer on a substrate using an atomic layer deposition (ALD) process

This invention relates to silicon precursor compositions for forming silicon-containing films by low temperature (e.g., &#x3c;550&#xb0; C.) chemical vapor deposition processes for fabrication of ULSI devices and device structures. Such silicon precursor compositions comprise at least a silane or disilane derivative that is substituted with at least one alkylhydrazine functional groups and is free of halogen substitutes.

Monosilane or disilane derivatives and method for low temperature deposition of silicon-containing films using the same

This invention relates to silicon precursor compositions for forming silicon-containing films by low temperature (e.g., &#x3c;300&#xb0; C.) chemical vapor deposition processes for fabrication of ULSI devices and device structures. Such silicon precursor compositions comprise at least one disilane derivative compound that is fully substituted with alkylamino and/or dialkylamino functional groups.

Composition and method for low temperature deposition of silicon-containing films

Novel silicon precursors for low temperature deposition of silicon films are described herein. The disclosed precursors possess low vaporization temperatures, preferably less than about 500&#xb0; C. In addition, embodiments of the silicon precursors incorporate a &#x2014;Si&#x2014;Y&#x2014;Si&#x2014; bond, where Y may comprise an amino group, a substituted or unsubstituted hydrocarbyl group, or oxygen. In an embodiment a silicon precursor has the formula: where Y is a hydrocarbyl group, a substituted hydrocarbyl group, oxygen, or an amino group; R, R, R, and Rare each independently a hydrogen group, a hydrocarbyl group, a substituted hydrocarbyl group, a heterohydrocarbyl group, wherein R, R, R, and Rmay be the same or different from one another; X, X, X, and Xare each independently, a hydrogen group, a hydrocarbyl group, a substituted hydrocarbyl group, or a hydrazine group, wherein X, X, X, and Xmay be the same or different from one another.

Silicon precursors and method for low temperature CVD of silicon-containing films

Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as low dielectric constant (k) thin films, high k gate silicates, low temperature silicon epitaxial films, and films containing silicon nitride (SiN), siliconoxynitride (SiON) and/or silicon dioxide (SiO). The precursors of the invention are amenable to use in low temperature (e.g., &#x3c;500&#xb0; C.) chemical vapor deposition processes, for fabrication of ULSI devices and device structures.

Composition and method for low temperature deposition of silicon-containing films such as films including silicon, silicon nitride, silicon dioxide and/or silicon-oxynitride

Novel silicon precursors for low temperature deposition of silicon films are described herein. The disclosed precursors possess low vaporization temperatures, preferably less than about 500&#xb0; C. In addition, embodiments of the silicon precursors incorporate a &#x2014;Si&#x2014;Y&#x2014;Si&#x2014; bond, where Y may comprise an amino group, a substituted or unsubstituted hydrocarbyl group, or oxygen. In an embodiment a silicon precursor has the formula: where Y is a hydrocarbyl group, a substituted hydrocarbyl group, oxygen, or an amino group; R, R, R, and Rare each independently a hydrogen group, a hydrocarbyl group, a substituted hydrocarbyl group, a heterohydrocarbyl group, wherein R, R, R, and Rmay be the same or different from one another; X, X, X, and Xare each independently, a hydrogen group, a hydrocarbyl group, a substituted hydrocarbyl group, or a hydrazino group, wherein X, X, X, and Xmay be the same or different from one another.

Growing community of inventors

Bethel, CT, United States of America

Ziyun Wang