Tsinghua University

Ge Precision Healthcare LLC

Ziyu Liu

Qian Wang

Yang Hu

Jian Cai

Yu Chen

Yanran Xu

Bingjie Zhao

Hsieh Jiang

Shuidi Wang

An apparatus and method for configuring scan parameters for an imaging system are described. The method for configuring scan parameters includes acquiring an RGB image and a depth image of a scan object, computing physical parameters of the scan object according to the RGB image and the depth image of the scan object, and configuring, according to the physical parameters, scan parameters for scanning the scan object. In this way, the scan parameters for scanning the scan object can be automatically configured, which improves the efficiency and standardization of a scan process. Moreover, an appropriate configuration of scan parameters can further avoid rescanning and poor-quality scout images resulting from manual errors. An example apparatus that may be used to perform the method includes an acquisition unit for acquiring the RGB image, a first computation unit for computing the physical parameters, and a configuration unit for configuring the scan parameters.

Apparatus and method for configuring scan parameters

The present invention provides a bonding method in semiconductor manufacturing process and a bonding structure formed using the same, which can achieve wafer-level bonding under a condition of normal temperature and low pressure. The bonding method comprises generating bonding structures capable of being mutually mechanical interlocked, wherein the frictional heat generated by the bonding structures capable of being mutually mechanical interlocked is higher than the bonding energy therebetween, and utilizing the frictional heat generated by the bonding structures capable of being mutually mechanical interlocked to bond the bonding structures capable of being mutually mechanical interlocked.

Method for bonding semiconductor devices on sustrate and bonding structure formed using the same

A bolometer and a preparation method thereof. The bolometer includes: an infrared detection element () and a readout circuit (), wherein the infrared detection element () is formed on one side of a first substrate (), and an edge of the infrared detection element () is provided with an electrode hole (), and the readout circuit () is formed on one side of a second substrate () and the readout circuit () has an electrode, the first substrate () is formed thereon with a silicon via () passing through the first substrate () and filed with a conductive material, the electrode hole () of the infrared detection element () is electrically connected to the electrode of the readout circuit () via the conductive material filled in the silicon via (). The following defects are overcome: bolometers in the prior art need to flatten the silicon wafer surface with a suitable chemical-mechanical polishing process after a readout circuit thereof has been manufactured, the circuit is large in area, and the requirements of the system integration process are high.

Bolometer and preparation method thereof

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Beijing, China

Ziyu Liu