Asahi Kasei Kabushiki Kaisha

Tokai National Higher Education and Research System

Ziyi Zhang

Hiroshi Amano

Tomohiro Morishita

Akira Yoshikawa

Maki Kushimoto

Aya Yokoyama

Yoshihito Hagihara

Ryosuke Hasegawa

Chiaki Sasaoka

A method of producing an ultraviolet laser diode with a low oscillation threshold current density includes stacking a first cladding layer, a light-emitting layer, and a second cladding layer on a substrate in this order to form a nitride semiconductor laminate (step S), etching at least a portion of the nitride semiconductor laminate to form a mesa structure and setting the ratio between the length of the resonator end faces and the length of the side surfaces of the mesa structure in plan view between 1:5 and 1:500 (step S), disposing first conductive material on a portion of a first area and applying heat treatment of 400° C. or higher to form a first electrode (step S), and disposing a second conductive material in an area on the second cladding layer, at a distance of 5 μm or more from the side surfaces, to form a second electrode (step S).

Method of producing ultraviolet laser diode, and ultraviolet laser diode

An object of the present invention is to provide a method for manufacturing an optical device having a laser diode, which method is suitable for mass production, and an optical device having a laser diode which allows accurate property evaluations thereof with small measurement errors. Specifically, the method includes: an etching process of etching a semiconductor lamination unit to form a mesa structure having a resonator end face, thereby forming a laser diode; and a reflecting layer forming process of forming a light reflecting layer such that the light reflecting layer covers entire side surfaces of the mesa structure, wherein the semiconductor lamination unit has a substate, a n-type clad layer including a nitride semiconductor layer having n-type conductivity, a light-emitting layer including at least one quantum well, and a p-type clad layer including a nitride semiconductor layer having p-type conductivity, laminated in this order.

Method for manufacturing optical device and optical device

To provide a nitride semiconductor element having a better contact resistance reduction effect also in the case of a light emitting element containing AlGaN having a high Al composition. The nitride semiconductor element has a substrate, a first conductivity type first nitride semiconductor layerformed on the substrate, and a first electrode layerformed on the first nitride semiconductor layer. The first electrode layercontains aluminum and nickel, and both aluminum and an alloy containing aluminum and nickel are present in a contact surface to the first nitride semiconductor layeror in the vicinity of the contact surface.

Nitride semiconductor element, nitride semiconductor light emitting element, ultraviolet light emitting element

Growing community of inventors

Tokyo, Japan

Ziyi Zhang